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| NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP) q Type BSS 79 B BSS 79 C BSS 81 B BSS 81 C Marking CEs CFs CDs CGs Ordering Code (tape and reel) Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol BSS 79 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 40 Values BSS 81 35 75 6 800 1 100 200 330 150 Unit V mA A mA mW C - 65 ... + 150 Rth JA Rth JS 290 220 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 C Emitter-base cutoff current VEB = 3 V DC current gain IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C BSS 79 B/81 B BSS 79 C/81 C VCEsat - - VBEsat - - - - 1.2 2.0 - - 0.3 1.3 V(BR)CE0 40 35 V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE 20 35 25 50 35 75 40 100 25 40 - - - - - - - - - - - - - - - - 120 300 - - V - - - - 10 10 10 nA A Values typ. max. Unit V - - - - - - - - 75 6 nA - Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BSS 79 BSS 81 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Open-circuit output capacitance VCB = 10 V, f = 1 MHz VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, VBE = 0.5 V Delay time Rise time Storage time Fall time fT Cobo - - 250 6 - - MHz pF Values typ. max. Unit td tr tstg tf - - - - - - - - 10 25 250 60 ns ns ns ns Test circuits Delay and rise time Storage and fall time Oscillograph: R > 100 k C < 12 pF tr < 5 ns Semiconductor Group 3 BSS 79 BSS 81 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 BSS 79 BSS 81 Saturation voltage IC = f (VBE sat) IC = f (VCE sat) hFE = 10 DC current gain hFE = f (IC) VCE = 10 V Delay time td = f (IC) Rise time tr = f (IC) Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 5 |
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